发明名称 |
Nitride-based semiconductor light emitting diode |
摘要 |
A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-type electrode pad formed on the transparent electrode; a pair of p-type connection electrodes formed in a line extending from the p-type electrode pad so as to have an inclination angle of less than 90 degrees with respect to one side of the transparent electrode adjacent to the p-type electrode pad; a pair of p-electrodes extending from both ends of the p-type connection electrodes in the direction of the n-type electrode pad, the p-electrode being formed in parallel to one side of the adjacent transparent electrode; and an n-type electrode pad formed on the n-type nitride semiconductor layer, on which the active layer is not formed, such that the n-type electrode pad faces the p-type electrode pad.
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申请公布号 |
US2007228388(A1) |
申请公布日期 |
2007.10.04 |
申请号 |
US20070651023 |
申请日期 |
2007.01.09 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
KO KUN YON;OH BANG WON;HAHM HUN JOO;KIM JE WON;PARK HYUNG JIN;HWANG SEOK MIN;KIM DONG WOO |
分类号 |
H01L33/06;H01L33/12;H01L33/32;H01L33/38;H01L33/42 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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