| 摘要 |
A method for manufacturing an image sensor is provided to improve the accuracy of alignment of a microlens and the yield and reliability of the image sensor by checking exactly an align mark in an exposure process using color photoresist patterns as the align mark. An interlayer oxide layer(102) is formed on a semiconductor substrate(100) having a light receiving region. A color filter array is formed on the interlayer oxide layer and an align mark(105) is formed within a scribe lane of the substrate, wherein the align mark is made of color photoresist patterns(105a,105b). A planarization layer(106) is formed on the resultant structure to cover the color filter array and the align mark. A microlens is exactly aligned on the planarization layer by using the align mark.
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