METHOD OF MANUFACTURING AN OPENING OF A SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME METHOD

摘要

A method for forming an opening of a semiconductor device and a method for manufacturing the semiconductor device using the same are provided to prevent the generation of bowing by forming a polymer containing silicon at sidewalls of pre-opening portion. An insulating layer(102) is formed on a substrate(100). A mask pattern(104) for exposing selectively the insulating layer to the outside is formed on the resultant structure. A pre-opening portion is formed on the resultant structure by etching partially the insulating layer using a first etch gas containing carbon under silicon gas atmosphere. An opening portion(110) is formed through the insulating layer by using a second etch gas. Oxygen gas and an inert gas are supplied under the per-opening and opening forming processes to control etch rates of the first and the second etch gases. A protection layer(108) is formed at sidewalls of the pre-opening under the pre-opening forming process. The protection layer is made of polymers containing silicon.