发明名称 |
METHODS OF PROGRAMMING NON-VOLATILE MEMORY DEVICES INCLUDING TRANSITION METAL OXIDE LAYER AS DATA STORAGE MATERIAL LAYER AND DEVICES SO OPERATED |
摘要 |
A method of programming a non-volatile memory device including a transition metal oxide layer includes applying a first electric pulse to the transition metal oxide layer for a first period to establish a resistance of the transition metal oxide layer and applying a second electric pulse to the transition metal oxide layer for a second period, longer than the first period, to increase the resistance of the transition metal oxide layer. Related devices are also disclosed. |
申请公布号 |
US2007228370(A1) |
申请公布日期 |
2007.10.04 |
申请号 |
US20070762483 |
申请日期 |
2007.06.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE MOON-SOOK;BAEK IN-GYU |
分类号 |
G11C11/00;H01L29/12 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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