SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which can improve light extraction efficiency from a desired light extraction surface.

SOLUTION: An anode electrode 5 located on the opposite side to a desired light extraction surface against a light emitting layer 3 is comprised of a first transparent conductive film 51 formed on a p-type semiconductor layer 4; a second transparent conductive film 52 formed on the first transparent conductive film 51; a plurality of multilayer reflection film layers 53 which are formed on the second transparent conductive film 52, and reflect a light radiated from the light emitting layer 3; a metal reflecting film 54 made of a metallic material which is formed in a manner that it may cover a region nor covered by the multilayer reflecting film layers 53 and the multilayer reflecting film layers 53 in the second transparent conductive film 52, and which has a high reflection factor to a light from the light emitting layer 3; a barrier metal film 55 formed on the metal reflecting film 54; and an external connection metal film 56 made of a metallic material which is formed on the barrier metal film 55.

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