发明名称 MANUFACTURING METHOD OF CAPACITOR FOR ANALOG FUNCTIONS
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a capacitor which prevents constituents except an upper electrode 112 of the capacitor from being affected by a doping agent during doping and makes the upper and lower electrodes 112 and 106a of the capacitor have a sufficient doping level and almost the same doping concentration each other. SOLUTION: After being polished by means of CMP, the upper surface of the upper electrode 112 of the capacitor is doped by the same doping process as that of the lower electrode 106a of the capacitor. After the lower electrode 106a of the capacitor is formed, a thermal oxidation process is performed so that impurity ions implanted into the lower electrode 106a of the capacitor are isolated on the upper surface of the lower electrode of the capacitor. This causes the upper and lower electrodes of the capacitor to have almost the same doping concentration at the interface between them. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007258758(A) 申请公布日期 2007.10.04
申请号 JP20070175703 申请日期 2007.07.04
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 OH CHANG-BONG;KIM YOUNG-WUG
分类号 H01L21/822;H01L27/04;H01L21/02;H01L21/8234;H01L27/06 主分类号 H01L21/822
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