| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a gate electrode in a semiconductor device, which can prevent abnormal oxidation of a titanium silicide film when the surface of a gate electrode consisting of a doped polysilicon film and the titanium silicide film is re-oxidized. SOLUTION: The method includes the steps of: forming a gate oxide film and a polysilicon film on a semiconductor substrate; depositing a first TiSix film on the polysilicon film; depositing a silicon film on the first TiSix film; depositing a second TiSix film on the silicon film; performing thermal treatment to form an TiSi<SB>2</SB>film in a silicon-rich state from the first TiSix film, the silicon film, and the second TiSix film; depositing an insulating film on the TiSi<SB>2</SB>film; patterning the insulating film, TiSi<SB>2</SB>film, polysilicon film, and gate oxide film to form a gate electrode having a laminated structure of TiSi<SB>2</SB>film and the polysilicon film; and performing gate re-oxidation. COPYRIGHT: (C)2008,JPO&INPIT
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