ARCHITECTURE FOR RIBBON ION BEAM ION IMPLANTER SYSTEM
摘要
An architecture (100) for a ribbon ion beam ion implanter system (102) is disclosed. In one embodiment, the architecture (100) includes an acceleration/deceleration parallelizing lens system (120) for receiving a fanned ribbon ion beam (124) and for at least parallelizing (and perhaps also accelerate or decelerate) the fanned ribbon ion beam (124) into a substantially parallel ribbon ion beam (112), and an energy filter system (122) downstream from the acceleration/deceleration parallelizing lens system (120) and prior to a work piece (128) to be implanted by the substantially parallel ribbon ion beam. The acceleration/deceleration parallelizing lens system (120) includes lenses (126) for at least parallelizing (and perhaps also accelerate or decelerate) the fanned ribbon ion beam (124) and acceleration/deceleration lenses for accelerating or decelerating the substantially parallel ribbon ion beam (112). The parallelizing lens allows delivery of a high current ribbon ion beam to the work piece (128) with energy that can extend down to as low as approximately 200 eV.
申请公布号
WO2007089468(A3)
申请公布日期
2007.10.04
申请号
WO2007US01665
申请日期
2007.01.22
申请人
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;SAADATMAND, KOUROSH;KELLERMAN, PETER L.