| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a gallium nitride compound semiconductor light emitting element which is superior in light takeout efficiency and operable at a low drive voltage, to provide the gallium nitride compound semiconductor light emitting element, and to provide a lamp using the same. <P>SOLUTION: The manufacturing method has a first crystal growing step of laminating a gallium nitride compound n-type semiconductor layer 13, a light emitting layer 14, and a first p-type semiconductor layer 15 in this order on a substrate 11; and a second crystal growing step of further laminating a second gallium nitride compound p-type semiconductor layer 16. It comprises a step of forming irregularities on the first p-type semiconductor layer 15 surface, and a step of heat treating after the irregularities forming step. Both steps are inserted between the first and second crystal growing steps. <P>COPYRIGHT: (C)2008,JPO&INPIT |
