| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a GaN-based semiconductor element which can easily manufacture the element while forming a good ohmic contact, and to provide the GaN-based semiconductor element. <P>SOLUTION: In the GaN-based semiconductor element 1, an n-type semiconductor layer 3, an active layer 4 and a p-type semiconductor layer 5 are successively laminated on an n-type GaN substrate 2. In the p-type semiconductor layer 5, a p-type electronic barrier layer 21, a p-type guiding layer 22, a p-type ultra-lattice clad layer 23 and a p-type contact layer 24 are successively laminated. The p-type contact layer 24 consists of a p-type GaN-based semiconductor layer having a thickness of about 500 Å which includes a connection layer 25 having a thickness of about 100 Å to be connected to a p-side electrode 6. The p-type contact layer 24 other than the connection layer 25 is grown using a hydrogen gas as a carrier gas, and the connection layer 25 is grown while changing only the carrier gas to a nitride gas as an inert gas. <P>COPYRIGHT: (C)2008,JPO&INPIT |
