| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a single crystal which does not give a heavy load to an apparatus even when a material charge into a crucible is excessive, can suppress the occurrence of dislocation, and can improve the yield and productivity, in the method for manufacturing a single crystal by using a single crystal pulling apparatus for pulling the single crystal from a crucible by the Czochralski method. SOLUTION: The method for manufacturing a single crystal C by using a single crystal pulling apparatus 1 where the single crystal C is pulled up from a crucible 3 by the Czochralski method, comprises a step for melting a raw material polysilicon in the crucible 3 a step for applying to the silicon melt M in the crucible 3 at least two magnetic fields having different strengths in turn for a specified time and repeating the magnetic field application treatment for a specified number of times, and a step for forming the neck part P1 of the single crystal C and pulling up the single crystal C from the crucible 3. COPYRIGHT: (C)2008,JPO&INPIT
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