| 摘要 |
A device and method for depositing a protective layer on a material during a plasma etching procedure in the course of fabricating semiconductor components, in particular in the course of fabricating DRAM chips, characterized in that the plasma has at least one precursor which, during the plasma etching procedure, together with a constituent of the plasma at least partially forms a protective layer on a planar region of the material and, characterized by a means for feeding the at least one precursor into the plasma, in which case, by means of the at least one precursor, during the plasma etching procedure, together with a constituent of the plasma, a protective layer can at least partially be deposited on a planar region of the material.
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