发明名称 |
Filling narrow and high aspect ratio openings with electroless deposition |
摘要 |
Methods of fabricating an interconnect utilizing an electroless deposition technique, which fundamentally comprises providing a dielectric material layer having an opening extending into the dielectric material from a first surface thereof, and electrolessly depositing a conductive material within the opening. A dual-function barrier layer is formed within the opening. The dual-function barrier layer is capable of acting as a diffusion barrier layer and a nucleation surface for a conductive material. An electrolessly deposited conductive material is formed immediately above the dual-function barrier layer. An ultra-thin seed layer may be formed immediately on top of the barrier layer prior to the electrolessly deposited conductive material being formed thereon.
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申请公布号 |
US2007232044(A1) |
申请公布日期 |
2007.10.04 |
申请号 |
US20060393282 |
申请日期 |
2006.03.29 |
申请人 |
CHOWDHURY SHAESTAGIR;TSANG CHI-HWA |
发明人 |
CHOWDHURY SHAESTAGIR;TSANG CHI-HWA |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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