| 摘要 |
A thin film transistor including an active layer formed on an insulating substrate and having channel, source, and drain regions formed therein; a gate electrode formed over the channel region of the active layer; source and drain electrodes respectively formed over the source and drain regions of the active layer; and a body contact region formed in the active layer so that the body contact region is in contact with the channel region and separated from the source and drain regions, wherein a voltage is applied to the channel region through the body contact region, and the body contact region is connected to the source electrode or the drain electrode.
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