| 摘要 |
A method of verifying a flash memory device is provided to reduce verify time by sensing an even bit line and an odd bit line sequentially after precharging and evaluating the even bit line and the odd bit line at the same time. According to a method of verifying a flash memory device, memory cell strings connected to an even bit line and an odd bit line are discharged at the same time. A voltage is applied to the memory cell strings connected to the even bit line and the odd bit line at the same time. Erase is verified by sensing the state of the memory cell string connected to the even bit line. Erase is verified by sensing the state of the memory cell string connected to the odd bit line.
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