| 摘要 |
A method of forming a metal line in a semiconductor device is provided to prevent damage of a metal layer or an abnormal oxide layer from being formed on the metal layer by forming a metallic protection layer on the metal layer. A barrier metal layer(110), a metal layer, a metallic protection layer(130) and a hard mask layer are sequentially formed on a semiconductor substrate(100). Then, the hard mask layer, the metallic protection layer and the metal layer are patterned. The hard mask layer is removed, and then an interlayer dielectric(150) is formed on the entire surface of the substrate. The metallic protection layer is made of one of Ti, TiN and Ti/TiN and has a thickness of 100 to 300Å.
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