| 摘要 |
A program method of a flash memory device is provided to prevent a program cell from maintaining a low boosting level by excluding the program cell from a channel boosting region by turning off the program cell. According to a program method of a flash memory device, a program voltage is applied to a selected cell among a plurality of memory cells in a cell string constituted with a source selection line, the plurality of memory cells and a drain selection line. A first pass voltage is applied to at least one of memory cells along the source selection line by referring to the cell where the program voltage is applied. A third pass voltage is applied to all memory cells along the drain selection line by referring to the cell where the first voltage is applied.
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