ALUMINUM NITRIDE SINTERED COMPACT, MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE, AND METHOD OF MANUFACTURING AUMINUM NITRIDE SINTERED COMPACT

摘要

PROBLEM TO BE SOLVED: To provide an aluminum nitride sintered compact exhibiting suitable volume resistivity when being used for a base body material of a static chuck under a high temperature atmosphere and having small temperature dependency of the volume resistivity.

SOLUTION: The temperature dependency of the volume resistivity of a grain boundary is decreased by forming (Sm,Ce)Al11O18powder on the grain boundary of an aluminum nitride (AlN) particle 1 to form a conductive passage 2 and the volume resistivity in the AlN particle 1 is kept to a high value even under the high temperature atmosphere by forming a solid solution of one of C and Mg in the AlN particle 1 to prevent the transfer of the conductive passage 2 into the AlN particle 1.

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