| 摘要 |
PROBLEM TO BE SOLVED: To provide an embedding nitride semiconductor laser having stable characteristics, and to provide a method of manufacturing the same. SOLUTION: A nitride semiconductor laser 10 has a recessed structure including an active layer 12 interposed between an n-type clad layer 11 and a p-type clad layer 13, and a current constriction layer 14 having an opening for constricting current to the active layer 12. In this embedding configuration, a regrown layer 15 is formed on the current constriction layer 14 so as to cover the opening of the current constriction layer 14. The regrown layer 15 is made up of a nitride semiconductor layer (InGaN layer, AlInGaN layer) containing In to which a p-type impurity is added. COPYRIGHT: (C)2008,JPO&INPIT
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