| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition for forming an insulating film capable of forming a dense insulating film with less voids between molecules, to provide the insulating film consisting of the composition, and to provide an organic semiconductor element which is obtained by using the insulating film, allowing low voltage driving and stable driving voltage value. SOLUTION: The composition for forming an insulating film contains a resin component (A) having silsesquioxane frame, and forms an insulating film between the gate electrode layer of an organic semiconductor element and an organic semiconductor film layer. The resin component (A) is a resin (A1) having a structure unit (a1) which is represented by formula (a-1). In the formula, X is alkylene radical of carbon numbers 1-15 or divalent aromatic hydrocarbon radical of carbon numbers 6-15, R<SP>1</SP>is hydrogen atom, alkyl radical of carbon numbers 1-15, or alkoxy alkyl radical of carbon numbers 2-15, R<SP>2</SP>is alkyl radical of carbon numbers 1-4, and n is 0 or 1. COPYRIGHT: (C)2008,JPO&INPIT
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