发明名称 SUBSTRATE PROCESSING DEVICE
摘要 PROBLEM TO BE SOLVED: To improve the uniformity of plasma treatment situation in the surface of a wafer and in wafers each other. SOLUTION: Electrode bodies 50 equipped with a perforated electrode plate 51, a sheet type electrode plate 52, and a dielectric body 53 in a holder 46 of a boat 43 are constructed corresponding to the wafers 1 on respective stages. The perforated electrode plate 51 and the sheet type electrode plate 52 are surrounded by the dielectric body 53 with a predetermined space. The electrode body 50 is arranged so that the sheet-type electrode plate 52 is faced to the active area side of the wafer 1. An AC power supply 61 for impressing AC power is connected between the perforated electrode plate 51 and the sheet-type electrode plate 52 of the electrode body 50 in parallel through an impedance matching box 62. An insulating transformer 63 is interposed on the way of a route for supplying the AC power. Uniform and flat plasma 54, produced by creeping discharge, is produced at the active area side of the wafer for the electrode body 50 to apply uniform plasma treatment to the main surface at the active area side of the wafer 1. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007258504(A) 申请公布日期 2007.10.04
申请号 JP20060081968 申请日期 2006.03.24
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 NOMURA RUI;YASHIMA SHINJI;TOYODA KAZUYUKI
分类号 H01L21/205;C23C16/503;H01L21/3065 主分类号 H01L21/205
代理机构 代理人
主权项
地址