| 摘要 |
PROBLEM TO BE SOLVED: To obtain a solid-state imaging device having high sensitivity without increasing manufacturing processes. SOLUTION: The method of manufacturing the solid-state imaging device forms, on a substrate, a photodiode for generating optically generated charges corresponding to an incident light, an accumulating section to which the optically generated charges generated in the photodiode are transferred, and a detecting section for detecting a charge quantity of the optically generated charges accumulated in the accumulating section. The method is provided with a first step of introducing one conductivity-type impurities into the substrate to form a first impurity region used as a transfer path of the optically generated charges, in a forming region of the photodiode; a second step of forming an insulating film having a film thickness gradually changing depending on a distance from the accumulating section on the surface of the substrate, in the forming region of the photodiode; and a third step of introducing another conductivity-type second impurities into the first impurity region via the insulating layer to form a second impurity layer, in the forming region of the photodiode. COPYRIGHT: (C)2008,JPO&INPIT
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