发明名称 |
Method for Manufacturing Compound Semiconductor Substrated with Pn Junction |
摘要 |
A compound semiconductor substrate manufacturing method suitable for manufacturing a compound semiconductor element having high electrical characteristics. The compound semiconductor substrate manufacturing method is a method for manufacturing a compound semiconductor substrate having pn junction, including an epitaxial growing process, a selective growing process and other discretionary processes after the epitaxial growing process. The highest temperatures in the selective growing process and other discretionary processes after the epitaxial growing process are lower than that in the epitaxial growing process prior to the selective growing process.
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申请公布号 |
US2007232018(A1) |
申请公布日期 |
2007.10.04 |
申请号 |
US20060597711 |
申请日期 |
2006.11.28 |
申请人 |
KOHIRO KENJI;UEDA KAZUMASA;HATA MASAHIKO |
发明人 |
KOHIRO KENJI;UEDA KAZUMASA;HATA MASAHIKO |
分类号 |
H01L21/20;H01L21/331;H01L21/205;H01L21/329;H01L21/337;H01L29/737;H01L29/808;H01L29/861 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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