| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device and its manufacturing method wherein a transparent electrode obtained by optimizing a relationship between a specific resistance and a transmission factor is used to materializ a stable high photoelectric conversion efficiency. <P>SOLUTION: The transparent electrode is a ZnO layer not containing Ga or the ZnO layer having added Ga, and the ZnO layer in which an additive amount of Ga is equal to or smaller than 5 atom% with respect to Zn in the ZnO layer. Also, the ZnO layer is formed by a sputter method in which a noble gas having added oxygen is used as a sputter gas, and an additive amount of oxygen in the sputter gas is 0.1 volume% to 5 volume% with respect to the total volume of the oxygen and noble gas. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
