| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing group III nitride crystals capable of improving the yield of Ga, and to provide GaN crystals obtained by the method. SOLUTION: When ammonia gas is introduced into a growth chamber 1 surrounded by one main face 2 of a susceptor 7 to be set with a substrate 6, a confronted face 3 confronted with the one main face 2 of the susceptor 7 with a space, and a side face 4 for dividing the space between the one main face 2 of the susceptor 7 and the confronted face 3, and further, group III chloride gas is introduced from an exhaust nozzle 8 for group III chloride gas in order to grow group III nitride crystals are grown on the substrate 6 set on the one main face of the susceptor 7; the group III nitride crystals are grown with a proviso that, when the area of the one main face 2 in the susceptor 7 is defined as Scm<SP>2</SP>; the distance between the one main face 2 of the susceptor 7 and the exhaust nozzle 8 for group III chloride gas is defined as Lcm, and the total in a standard state of the gas to be introduced into the growth chamber 1 is defined as Vcm<SP>3</SP>/s, the value of S/L/V is allowed to satisfy≥0.1 s/cm<SP>2</SP>. COPYRIGHT: (C)2008,JPO&INPIT
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