| 摘要 |
PROBLEM TO BE SOLVED: To prevent the degradation of a single crystal caused by the oxidation of a solution when growing a nitride single crystal by a flux method. SOLUTION: An outer container 4 is disposed inside an atmosphere controlling container 5, and a crucible is disposed inside the outer container 4. A seed crystal is immersed in a solution containing an easily oxidizing substance in the crucible, from which a nitride single crystal is grown. The atmosphere upon growing the nitride single crystal comprises nitrogen supplied from a nitrogen cylinder 19 and a reducing gas supplied from a reducing gas cylinder 21, and preferably the reducing gas contains hydrogen. COPYRIGHT: (C)2008,JPO&INPIT
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