发明名称 Method for Forming Passivation Layer
摘要 A method for forming a passivation layer is disclosed. In the method, a substrate containing a top surface and a bottom surface opposite to the top surface is first provided, wherein a plurality of conductive pads are disposed on the top surface thereof. Thereafter, a first passivation layer is formed on the top surface of the substrate, wherein the first passivation layer has a characteristic of photoresist. A first exposure/develop step is then performed to form a plurality of first openings in the first passivation layer, wherein the conductive pads are exposed through the first openings. Then, a second passivation layer is formed on the first passivation layer, wherein the second passivation layer has a characteristic of photoresist. A second exposure/develop step is then performed to form a plurality of second openings in the second passivation layer, wherein the conductive pads are exposed through the second openings.
申请公布号 US2007232052(A1) 申请公布日期 2007.10.04
申请号 US20060617157 申请日期 2006.12.28
申请人 ADVANCED SEMICONDUCTOR ENGINEERING INC. 发明人 SU CHENG-HSUEH;LU HSING-FU;HO TSUNG-CHIEH;WU SHYH-ING
分类号 H01L21/44 主分类号 H01L21/44
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