发明名称 SOLID-STATE IMAGING APPARATUS, MANUFACTURING METHOD THEREFOR, AND CAMERA
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus capable of suppressing at least dark current, a manufacturing method therefor, and a camera equipped with the solid-state imaging apparatus. <P>SOLUTION: The solid-state imaging apparatus according to the present embodiment has a wiring layer on a first surface side of a substrate 30 to receive light from a second surface side of the substrate 30. The solid-state imaging apparatus comprises: a light receiving unit 31 that is formed on the substrate 30 to include a charge-storage region 41; a transfer gate 51 that is disposed on the first surface of the substrate 30 to be adjacent to the light receiving unit 31 and transfers a signal charge stored in the light receiving unit 31; and a control gate 52 that is disposed on the first surface of the substrate 30 to overlie the light receiving unit 31 and controls the electric potential near the first surface of the light receiving unit 31. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2007258684(A) 申请公布日期 2007.10.04
申请号 JP20070025807 申请日期 2007.02.05
申请人 SONY CORP 发明人 YAMAGUCHI TETSUJI;MARUYAMA YASUSHI;ANDO TAKASHI;HIYAMA SUSUMU;OGISHI HIROKO
分类号 H01L27/146;H01L27/14;H04N5/335;H04N5/361;H04N5/369;H04N5/374 主分类号 H01L27/146
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