摘要 |
PROBLEM TO BE SOLVED: To provide a negative voltage boosting charge pump circuit for avoiding an activation failure accompanied by an increase in stages of a voltage boosting unit and reduction in current driving capability without complicating a process and increasing a chip size. SOLUTION: In the negative voltage boosting charge pump circuit, charge transferring transistors and outputting transistors are connected in series at a plurality of the stages, the preceding stage comprises P-channel field effect transistors (P1-P3, ...), and the subsequent stage comprises N-channel field effect transistors (Nm, No). COPYRIGHT: (C)2008,JPO&INPIT
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