| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which can self-alignedly form a contact portion of substrate in a universal contact hole, and to provide the semiconductor device. SOLUTION: The universal contact hole 7 where a source region 3 is exposed is opened on an interlayer insulating film 9, first conductivity-type (P-type) impurities are injected into a semiconductor substrate 100 through the universal contact hole 7, and the source region 3 exposed on the center of the bottom surface of the universal contact hole 7 is made into a first conductivity-type region 5 having the same conductivity-type as that of the substrate region. A universal contact 13 is electrically connected to the source region 3 exposed on the bottom surface peripheral portion of the universal contact hole 7. Thus, the positional relation between the substrate region and the contact of the source region becomes constant, and current unequality in the source region can be solved. COPYRIGHT: (C)2008,JPO&INPIT
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