PLASMA UNIFORMING METHOD IN ION SOURCE DEVICE AND ION SOURCE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an ion source device capable of generating an ion beam of high dopant ratio having even current distribution by reducing hydrogen ion (Hx+) in the ion beam. SOLUTION: The ion source device includes a plurality of antennas 22 aligned in a first direction parallel to an ion beam drawing surface in a vacuum plasma chamber 10 for generating a high frequency electric field in the plasma chamber, two pairs of antenna facing magnets 30A, B for forming a high concentration electron generation area and assisting generation of plasma which are provided facing each other across the antennas and forming a magnet field transverse to the antennas, a position adjusting member for moving the antenna facing magnets and an ion beam drawing system, provided at the ion beam drawing surface, consisting of a plurality of electrodes for drawing out the ion beam from the generated plasma. Especially, concentration of plasma in the plasma chamber is uniformed in the first direction by making a loop form of the antennas long in the first direction. COPYRIGHT: (C)2008,JPO&INPIT