| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device provided with a word decoder circuit in which a leak current of a defective cell replaced by a redundancy circuit is not generated. SOLUTION: The device is provided with: a main word decoder circuit outputting the first and the second output signals; and a sub-word decoder circuit having a load transistor to which the first output signal is input and a driver transistor to which the second output signal is input, and the device is characterized in that it has the word decoder circuit outputting the word line level from the sub-word decoder circuit as a high level, a low level, and a high impedance state. In the word decoder circuit, the word line of the memory cell array replaced by the redundancy circuit is set in the high impedance state. COPYRIGHT: (C)2008,JPO&INPIT
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