发明名称 |
Uniform silicide metal on epitaxially grown source and drain regions of three-dimensional transistors |
摘要 |
A method for fabricating a three-dimensional transistor is described. Atomic Layer Deposition of nickel, in one embodiment, is used to form a uniform silicide on all epitaxially grown source and drain regions, including those facing downwardly.
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申请公布号 |
US2007231984(A1) |
申请公布日期 |
2007.10.04 |
申请号 |
US20060395940 |
申请日期 |
2006.03.31 |
申请人 |
METZ MATTHEW V;DATTA SUMAN;DOCZY MARK L;KAVALIEROS JACK T;BRASK JUSTIN K;CHAU ROBERT S |
发明人 |
METZ MATTHEW V.;DATTA SUMAN;DOCZY MARK L.;KAVALIEROS JACK T.;BRASK JUSTIN K.;CHAU ROBERT S. |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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