| 摘要 |
A process for fabricating a semiconductor package which includes using an exothermically active nanoparticle paste (10) to join an electrode (12) of a semiconductor die (14) to a support body (16, for example, a conductive clip. The die pad may be on an IMS or DBC. The nanoparticles may be less than 200nm in diameter and comprise silver, copper or bismuth or alloys of silver/copper, bismuth/silver, silver/aluminium, tin silver alloy, and tin/bismuth/copper ternary alloys. The exothermic reaction may be initiated using one of an infrared or ultraviolet source, a convection oven or a spark. Alternatively, an electrode of a semiconductor die may be coated with exothermically active nanoparticle paste, and a conductive support may also be coated with exothermically active nanoparticle paste. The exothermic reaction commences when the two coatings of nanoparticles are place in contact. |
