发明名称 |
LIGHT EMITTING DEVICE STRUCTURE USING NITRIDE BULK SINGLE CRYSTAL LAYER |
摘要 |
The object of this invention is to provide a high-output type nitride light emitting device. <??>The nitride light emitting device comprises an n-type nitride semiconductor layer or layers, a p-type nitride semiconductor layer or layers and an active layer therebetween, wherein a gallium-containing nitride substrate is obtained from a gallium-containing nitride bulk single crystal, provided with an epitaxial growth face with dislocation density of 10<5>/cm<2> or less, and A-plane or M-plane which is parallel to C-axis of hexagonal structure for an epitaxial face, wherein the n-type semiconductor layer or layers are formed directly on the A-plane or M-plane. <??>In case that the active layer comprises a nitride semiconductor containing In, an end face film of single crystal AlxGa1-xN (0≤x≤1) can be formed at a low temperature not causing damage to the active layer. <IMAGE> |
申请公布号 |
EP1453159(A4) |
申请公布日期 |
2007.10.03 |
申请号 |
EP20020803072 |
申请日期 |
2002.10.28 |
申请人 |
AMMONO SP.Z O.O.;NICHIA CORPORATION |
发明人 |
DWILINSKI, ROBERT;DORADZINSKI, ROMAN;GARCZYNSKI, JERZY;SIERZPUTOWSKI, LESZEK;KANBARA, YASUO |
分类号 |
C30B7/00;C30B7/10;C30B9/00;C30B29/40;H01L21/318;H01S5/00;H01S5/02;H01S5/028;H01S5/16;H01S5/22;H01S5/32;H01S5/323;H01S5/343 |
主分类号 |
C30B7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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