Roughness reducing film at an interface between a wiring line and a dielectric, materials for forming the roughness reducing film, and method for manufacturing a semiconductor device

摘要

Techniques for obtaining a wiring layer with a high TDDB resistance and little leakage current, and accordingly, for manufacturing a highly reliable semiconductor device with a small electric power consumption are provided, in which an interfacial roughness reducing film (12) is formed which is in contact with an insulator film (10) and also in contact with a wiring line on the other side surface thereof, and has an interfacial roughness between the wiring line and the interfacial roughness reducing film smaller than that between the insulator film and the interfacial roughness reducing film.