发明名称 Structure comprising Peltier cells integrated on a semiconductor substrate and corresponding manufacturing process
摘要 Structure (10) integrated on a semiconductor substrate (11) comprising at least one elementary Peltier cell which comprises: a conductive region (15) formed in the semiconductor substrate (11) being less resistive with respect to the semiconductor substrate (11), a first semiconductive region (19) projecting from the semiconductor substrate (11) in electric contact with the conductive region (15), a second semiconductive region (23) projecting from the semiconductor substrate (11) in electric contact with the conductive region (15) and spaced from the first semiconductive region (19), the first semiconductive region (19) and the second semiconductive region (23) having different type of conductivity.
申请公布号 EP1840980(A1) 申请公布日期 2007.10.03
申请号 EP20060425225 申请日期 2006.03.31
申请人 STMICROELECTRONICS S.R.L. 发明人 CROCIFISSO, MARCO ANTONIO;COFFA, SALVATORE
分类号 H01L35/32;C12M1/38;H01L23/38 主分类号 H01L35/32
代理机构 代理人
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