发明名称 |
Method for manufacturing a nonvolatile memory device with a variable resistor |
摘要 |
In a manufacturing method of a nonvolatile semiconductor memory device including a variable resistive element having a variable resistor (8) made of a perovskite-type metal oxide film, the variable resistor (8) is formed at a temperature which is lower than the melting point of a metal wire layer (11) that has been formed before formation of the variable resistor (8). More preferably, the variable resistor (8) is formed by a praseodymium calcium manganese oxide, which is represented by a general formula, Pr 1-x Ca x MnO 3 , carried out at a film forming temperature in a range from 350°C to 500°C according to a sputtering method. |
申请公布号 |
EP1555700(A3) |
申请公布日期 |
2007.10.03 |
申请号 |
EP20050000519 |
申请日期 |
2005.01.12 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
KAWAZOE, HIDECHIKA;TAMAI, YUKIO;SHIMAOKA, ATSUSHI;HAGIWARA, NAOTO;MATSUSHITA, YUJI;NISHI, YUJI |
分类号 |
H01L27/10;H01L45/00;G11C13/00;H01L21/02;H01L21/8246;H01L21/8247;H01L27/06;H01L27/112;H01L27/115;H01L27/24;H01L29/68 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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