| 摘要 |
<p>A semiconductor device with a trench gate, comprising:
a first semiconductor layer (11) of first conductivity type;
a second semiconductor layer (17) of second conductivity type, which is arranged on the first semiconductor layer, to inject carriers of second conductivity type into the first semiconductor layer;
a third semiconductor layer of second conductivity type (12), which is arranged on the first semiconductor layer, to discharge the carriers of second conductivity type in the first semiconductor layer from the first semiconductor layer;
a pair of gate electrodes (14) disposed in a pair of trenches (13) via gate insulating films (21), respectively; the pair of trenches (13) extending through the third semiconductor layer (12) and reaching the first semiconductor layer (11);
a pair of fourth semiconductor layers (15) of first conductivity type, which are formed along the pair of trenches (13), respectively, in a surface of the third semiconductor layer (12) which is not interposed between the pair of trenches, each of the fourth semiconductor layers (15) being arranged to inject carriers of first conductivity type through a channel induced in the third semiconductor layer (12) by corresponding one of the gate electrodes into the first semiconductor layer and cause conductivity modulation therein;
a first main electrode (20) disposed in contact with the second semiconductor layer (17);
a second main electrode (19) disposed in contact with the third and fourth semiconductor layers; and
a fifth semiconductor layer (51) of second conductivity type, which has a resistance lower than that of the third semiconductor layer (12); and is formed in a non-current path region interposed between the pair of trench portions, such that the fifth semiconductor layer (51) reaches at least a depth near bottom portions of the trenches (13), and the first and fifth semiconductor layers form a pn-junction.
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