发明名称 Semiconductor integrated circuit device
摘要 In a semiconductor integrated circuit device, semiconductor elements formed in active regions included in a first element formation portion (stress transition region) in a peripheral circuit formation portion are not electrically driven, while only semiconductor elements of a second element formation portion (steady stress region) are electrically driven. Therefore, the second element formation portion in the peripheral circuit formation portion is located away from an outer STI region so as to be hardly affected by compressive stress.
申请公布号 US7276769(B2) 申请公布日期 2007.10.02
申请号 US20040817861 申请日期 2004.04.06
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 YAMADA MASARU;OKUNO YASUTOSHI
分类号 H01L21/76;H01L29/72;H01L21/822;H01L21/8242;H01L27/00;H01L27/02;H01L27/04;H01L27/08;H01L27/10;H01L27/108;H01L29/76 主分类号 H01L21/76
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