| 摘要 |
A memory is provided to perform a high speed operation, by comprising a bit line and a word line arranged as crossing with each other and a memory cell located on the crossing part of the bit line and the word line. A memory comprises a bit line(BL), a word line(WL) and a memory cell. The bit line and the word line cross with each other, and the memory cell is arranged on the crossing position of the bit line and the word line. When data of the memory cell is read, a read operation and a rewrite operation comprising a plurality of operations are performed. The read operation and the rewrite operation begin as a voltage applied to the bit line and the word line is shifted to an applied voltage according to each operation. When each operation performed when the data of the memory cell is read is performed, the applied voltage as to the bit line and the word line is directly changed to the applied voltage according to the operation thereafter from the applied voltage according to the operation there before.
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