| 摘要 |
A nitride semiconductor light emitting device is provided to obtain an electrostatic discharge protection characteristic in which optical efficiency is not deteriorated by including a light emitting diode having an electrostatic discharge protection characteristic. A light emitting device(300) is formed at one side of a substrate(310), including semiconductor layers(320,340,345) of first to third conductivity types. A protection device(400) is formed at the other side of the substrate, including semiconductor layers of the first to the third conductivity types. The semiconductor layer of the third conductivity type in the light emitting device is electrically connected to the semiconductor layer(420) of the first conductivity type in the protection device by a first interconnection. The semiconductor layer of the first conductivity type in the light emitting device is electrically connected to the semiconductor layer(445) of the third conductivity type in the protection device by a second interconnection(461). A bonding pad(360,460) can be formed in at least one of the semiconductor layers of the first and the third conductivity types in the protection device, connected to the interconnection.
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