| 摘要 |
A complex memory chip is provided to induce a high voltage by increasing an operation voltage and then to erase data by applying the high voltage to a flash memory. A first voltage pin(201) transfers a first voltage. A second voltage pin(203) transfers a second voltage lower than the first voltage in order to define an operation voltage with the first voltage. A voltage generator(205) generates a third voltage larger than the first voltage, according to the first voltage. A flash memory(207) erases data according to the third voltage. The complex memory chip also includes a static random access memory(SRAM)(209). The flash memory and the SRAM operate under the operation voltage.
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