发明名称 DEVICE FOR GENERATING INTERNAL BIAS OF SEMICONDUCTOR DEVICE
摘要 An internal voltage generating apparatus of a semiconductor device is provided to generate an initial internal voltage stably, by comprising a passive element capable of initializing the internal voltage by supplying an external power supply voltage, a ground voltage and a power-up signal to the internal voltage generating apparatus even when the power-up signal is below a threshold voltage. A power-up sensing part(110) generates a power-up signal by receiving an external power supply voltage. An internal voltage generation part(130) generates an internal voltage. An initial potential maintaining part(120) comprises a transistor(1210,1230) and a passive element(1215,1235). The transistor is enabled by the power-up signal and provides the external power supply voltage to the internal voltage generation part, and the passive element is connected to the transistor in parallel. A source of the transistor is connected to the external power supply voltage or a ground voltage, and a drain of the transistor is connected to the internal voltage generation part.
申请公布号 KR20070096123(A) 申请公布日期 2007.10.02
申请号 KR20060002322 申请日期 2006.01.09
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, SAENG HWAN
分类号 G11C5/14;G11C7/20 主分类号 G11C5/14
代理机构 代理人
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