发明名称 |
Reduction of dopant loss in a gate structure |
摘要 |
A semiconductor device includes offset spacers that contact opposing side surfaces of a gate of a gate structure. The offset spacers can be formed by selectively depositing an oxide layer over the gate and the semiconductor substrate so that the opposing side surfaces of the gate e are substantially free of the oxide layer. Offset spacers can then be formed that contact the opposing side surfaces of the gate.
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申请公布号 |
US7276408(B2) |
申请公布日期 |
2007.10.02 |
申请号 |
US20030681399 |
申请日期 |
2003.10.08 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
CHEN YUANNING;VISOKAY MARK |
分类号 |
H01L21/8249;H01L21/28;H01L21/311;H01L21/314;H01L21/316;H01L21/332;H01L21/336 |
主分类号 |
H01L21/8249 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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