| 摘要 |
A method for controlling crystal polarity of a ZnO thin film during an MBE(Molecular Beam Epitaxy) growth of a ZnO/GaN hetero-epitaxial thin film for display device is provided to control the crystal polarity of the ZnO thin film by using Zn polarity or oxygen polarity. A sapphire substrate is loaded into an MBE vacuum chamber in order to grow a ZnO/GaN hetero-epitaxial thin film for display device. In the growing process of the ZnO/GaN hetero-epitaxial thin film for display device, the surface of a ZnO thin film is sputtered through Zn or oxygen gas plasma. The crystal polarity of the ZnO thin film is controlled by using Zn polarity or oxygen polarity.
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