Compound semiconductor light emitting device and its manufacturing method

摘要

A compound semiconductor light emitting device for preparing a chip which improves the light extraction efficiency, enables mounting of easy positioning with only once wire bonding, and leads to a reduction in the manhour. One face of an insulative substrate ( 11 ) is overlaid with a semiconductor layer ( 4 ) consisting of a plurality of semiconductor thin films to form an active layer ( 15 ). One electrode ( 33 ) is formed on the top face of this semiconductor layer ( 4 ), and the other electrode ( 33 ) on the other face of the insulative substrate ( 11 ). For the exposure of a first semiconductor thin film layer ( 13 ) connected to the other electrode ( 33 ), the semiconductor film over the first semiconductor thin film layer ( 13 ) is removed to form an exposure region ( 10 ). This exposure region ( 10 ) is provided with a through hole ( 2 ) penetrating through the insulative substrate ( 11 ) and first semiconductor thin film layer ( 13 ). The first semiconductor thin film layer ( 13 ) and the other electrode ( 33 ) are electrically connected with a conductive material ( 3 ) formed on the through hole ( 2 ).