| 摘要 |
A wet-etching method for a semiconductor wafer having an exposed nitride layer is provided to control absorption of particles to the surface of a nitride layer by supplying DIW(deionized water) together with a strong base to the inside of a bath when a rinse process using DIW is performed after a cleaning process. A cleaning process is performed on a semiconductor wafer having an exposed nitride layer by using a wet cleaning solution. A rinse process is performed on the cleaned semiconductor wafer by using a mixture solution of DIW and a strong base. The strong base can include KOH or NaOH. The volume ratio of the strong base to the mixture solution of the DIW and the strong base can be less than 10 %.
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