发明名称 Semiconductor storage device precharging/discharging bit line to read data from memory cell
摘要 A read circuit includes a precharge circuit, a discharge circuit, and a sense amplifier. The precharge circuit includes a first transistor which has a gate connected to the bit line, a second transistor which has a gate connected to the bit line, the second transistor having a current path one end of which is connected to one end of a current path in the first transistor, a third transistor which has a current path one end of which is connected to the other end of the current path in the first transistor, the other end of the current path in the third transistor being connected to a power supply, and a fourth transistor which has a gate connected to a junction between the current paths in the first and second transistors and which controls a charge level of the bit line.
申请公布号 US7277339(B2) 申请公布日期 2007.10.02
申请号 US20050240620 申请日期 2005.10.03
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 EDAHIRO TOSHIAKI
分类号 G11C7/00;G11C16/06 主分类号 G11C7/00
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