| 摘要 |
<p>A semiconductor device and a fabricating method thereof are provided to improve the coverage of an oxidation-preventing film composed of P-SiN(SiON) covering a W film embedded in an alignment mark. A W film(2) embedded in a groove(10) of an alignment mark(1) is formed when a plug extending from a transistor of an FRAM is formed through a damascene process. A P-SiN(SiON) oxidation-preventing film(3) is deposited on the W film through a plasma chemical vapor deposition growth method. The oxidation-preventing film composed of P-SiN(SiON) is thermal-treated at 650 deg.C for five minutes, thereby forming the thermally contracted dense film having satisfactory coverage.</p> |
